SI4463BDY MOSFET Transistor

The SI4463BDY is a P-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the SI4463BDY transistor as follows.

SI4463BDY Transistor Specification

Transistor Code		SI4463BDY
Transistor Type		MOSFET
Control Channel Type		P-Channel
Package		SOP8
Transistor SMD Code		4463B
Drain-Source Voltage (Maximum)	VDS	20V
Gate-Source Voltage (Maximum)	VGS	12V
Drain Current (Maximum)	ID	9.8A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.011Ohm
Power Dissipation (Maximum)	PD	1.5W
Operating Junction Temperature (Maximum)		150°C
Rise Time		90nS
Gate-Threshold Voltage (Maximum)		1.4V

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