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SI2327DS MOSFET Transistor

The SI2327DS is a P-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the SI2327DS transistor as follows.

Circuit diagram symbol of the SI2327DS transistor

SI2327DS Transistor Specification

Transistor Code SI2327DS
Transistor Type MOSFET
Control Channel Type P-Channel
Package SOT-23
Transistor SMD Code D7
Drain-Source Voltage (Maximum) VDS 200V
Gate-Source Voltage (Maximum) VGS 20V
Drain Current (Maximum) ID 0.38A
Drain-Source On-State Resistance (Maximum) RDS(on) 2.35Ohm
Power Dissipation (Maximum) PD 0.75W
Drain-Source Capacitance 25pF
Operating Junction Temperature (Maximum) 150°C
Gate-Threshold Voltage (Maximum) 4.5V

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