SI2302DS MOSFET Transistor

The SI2302DS is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the SI2302DS transistor as follows.

SI2302DS Transistor Specification

Transistor Code		SI2302DS
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TO236AB
Transistor SMD Code		A2
Drain-Source Voltage (Maximum)	VDS	20V
Gate-Source Voltage (Maximum)	VGS	8V
Drain Current (Maximum)	ID	2.5A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.085Ohm
Power Dissipation (Maximum)	PD	0.83W
Operating Junction Temperature (Maximum)		150°C
Gate-Threshold Voltage (Maximum)		0.65V

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