SI1917EDH MOSFET Transistor

The SI1917EDH is a P-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the SI1917EDH transistor as follows.

SI1917EDH Transistor Specification

Transistor Code		SI1917EDH
Transistor Type		MOSFET
Control Channel Type		P-Channel
Package		SOT-363
Transistor SMD Code		DB*
Drain-Source Voltage (Maximum)	VDS	12V
Gate-Source Voltage (Maximum)	VGS	12V
Drain Current (Maximum)	ID	1A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.37Ohm
Power Dissipation (Maximum)	PD	0.57W
Operating Junction Temperature (Maximum)		150°C
Rise Time		710nS
Gate-Threshold Voltage (Maximum)		0.45V

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