SHD225617 MOSFET Transistor

The SHD225617 is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the SHD225617 transistor as follows.

SHD225617 Transistor Specification

Transistor Code		SHD225617
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TO-254
Drain-Source Voltage (Maximum)	VDS	1000V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	10A
Drain-Source On-State Resistance (Maximum)	RDS(on)	1.2Ohm
Power Dissipation (Maximum)	PD	350W
Drain-Source Capacitance		310pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		33nS
Gate-Threshold Voltage (Maximum)		4.5V

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