SFF20N60P MOSFET Transistor

The SFF20N60P is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the SFF20N60P transistor as follows.

SFF20N60P Transistor Specification

Transistor Code		SFF20N60P
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TO-259
Drain-Source Voltage (Maximum)	VDS	600V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	20A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.4Ohm
Power Dissipation (Maximum)	PD	150W
Drain-Source Capacitance		420pF
Operating Junction Temperature (Maximum)		175°C
Rise Time		30nS
Gate-Threshold Voltage (Maximum)		4.5V

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