SFF11N80M MOSFET Transistor

The SFF11N80M is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the SFF11N80M transistor as follows.

SFF11N80M Transistor Specification

Transistor Code		SFF11N80M
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TO-254
Drain-Source Voltage (Maximum)	VDS	800V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	11A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.95Ohm
Power Dissipation (Maximum)	PD	150W
Drain-Source Capacitance		360pF
Operating Junction Temperature (Maximum)		175°C
Rise Time		33nS
Gate-Threshold Voltage (Maximum)		4.5V

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