RU75170S MOSFET Transistor

The RU75170S is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the RU75170S transistor as follows.

RU75170S Transistor Specification

Transistor Code		RU75170S
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TO-263
Drain-Source Voltage (Maximum)	VDS	75V
Gate-Source Voltage (Maximum)	VGS	25V
Drain Current (Maximum)	ID	150A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.006Ohm
Power Dissipation (Maximum)	PD	300W
Drain-Source Capacitance		700pF
Operating Junction Temperature (Maximum)		175°C
Rise Time		96nS
Gate-Threshold Voltage (Maximum)		4V
Total Gate Charge		145nC

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