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RU60C20R5 MOSFET Transistor

The RU60C20R5 is a NP-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the RU60C20R5 transistor as follows.

Circuit diagram symbol of the RU60C20R5 transistor

RU60C20R5 Transistor Specification

Transistor Code RU60C20R5
Transistor Type MOSFET
Control Channel Type NP-Channel
Package TO-220-5
Drain-Source Voltage (Maximum) VDS 60V
Gate-Source Voltage (Maximum) VGS 16V
Drain Current (Maximum) ID 20A
Drain-Source On-State Resistance (Maximum) RDS(on) 0.05Ohm
Power Dissipation (Maximum) PD 50W
Drain-Source Capacitance 285pF
Operating Junction Temperature (Maximum) 175°C
Rise Time 15nS
Gate-Threshold Voltage (Maximum) 4V

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