RU60101R MOSFET Transistor

The RU60101R is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the RU60101R transistor as follows.

RU60101R Transistor Specification

Transistor Code		RU60101R
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TO-220
Drain-Source Voltage (Maximum)	VDS	60V
Gate-Source Voltage (Maximum)	VGS	25V
Drain Current (Maximum)	ID	100A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.008Ohm
Power Dissipation (Maximum)	PD	150W
Drain-Source Capacitance		285pF
Operating Junction Temperature (Maximum)		175°C
Rise Time		26nS
Gate-Threshold Voltage (Maximum)		4V

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