RU2H30Q MOSFET Transistor

The RU2H30Q is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the RU2H30Q transistor as follows.

RU2H30Q Transistor Specification

Transistor Code		RU2H30Q
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TO-247
Drain-Source Voltage (Maximum)	VDS	200V
Gate-Source Voltage (Maximum)	VGS	25V
Drain Current (Maximum)	ID	30A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.085Ohm
Power Dissipation (Maximum)	PD	180W
Drain-Source Capacitance		308pF
Operating Junction Temperature (Maximum)		175°C
Rise Time		48nS
Gate-Threshold Voltage (Maximum)		4V

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