RU20P18L MOSFET Transistor

The RU20P18L is a P-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the RU20P18L transistor as follows.

RU20P18L Transistor Specification

Transistor Code		RU20P18L
Transistor Type		MOSFET
Control Channel Type		P-Channel
Package		TO-252
Drain-Source Voltage (Maximum)	VDS	20V
Gate-Source Voltage (Maximum)	VGS	12V
Drain Current (Maximum)	ID	18A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.04Ohm
Power Dissipation (Maximum)	PD	30W
Drain-Source Capacitance		90pF
Operating Junction Temperature (Maximum)		175°C
Rise Time		11nS
Gate-Threshold Voltage (Maximum)		1V

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