RU1H190R MOSFET Transistor

The RU1H190R is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the RU1H190R transistor as follows.

RU1H190R Transistor Specification

Transistor Code		RU1H190R
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TO-220
Drain-Source Voltage (Maximum)	VDS	100V
Gate-Source Voltage (Maximum)	VGS	25V
Drain Current (Maximum)	ID	190A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.0065Ohm
Power Dissipation (Maximum)	PD	333W
Drain-Source Capacitance		940pF
Operating Junction Temperature (Maximum)		175°C
Rise Time		38nS
Gate-Threshold Voltage (Maximum)		4V
Total Gate Charge		158nC

UXPython is not the creator or an official representative of the RU1H190R MOSFET transistor. You can download the official RU1H190R MOSFET transistor datasheet to get more infromation about this transistor.

Note : Copyrighted materials belong to their creator or official representative.

More Transistors Datasheets in N-Channel MOSFET

STP360N4F6 MOSFET Transistor TSM4NB60CZ MOSFET Transistor IPP14N03LA MOSFET Transistor CS48N78 MOSFET Transistor STP5N95K5 MOSFET Transistor STP6NK70Z MOSFET Transistor HX5N6 MOSFET Transistor SM1108NSF MOSFET Transistor TSM3N80CZ MOSFET Transistor UTF1404 MOSFET Transistor STP5NK40Z MOSFET Transistor RU7590R MOSFET Transistor SML9030-220M-ISO MOSFET Transistor AP85T03GP-HF MOSFET Transistor HFP12N60S MOSFET Transistor UF540 MOSFET Transistor IPP034N08N5 MOSFET Transistor FQP70N08 MOSFET Transistor WFP12N60 MOSFET Transistor FQP9N25C MOSFET Transistor