RU1C002UN MOSFET Transistor

The RU1C002UN is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the RU1C002UN transistor as follows.

RU1C002UN Transistor Specification

Transistor Code		RU1C002UN
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		UMT3F
Drain-Source Voltage (Maximum)	VDS	20V
Gate-Source Voltage (Maximum)	VGS	8V
Drain Current (Maximum)	ID	0.2A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.8Ohm
Power Dissipation (Maximum)	PD	0.15W
Drain-Source Capacitance		10pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		10nS

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