RTF016N05 MOSFET Transistor

The RTF016N05 is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the RTF016N05 transistor as follows.

RTF016N05 Transistor Specification

Transistor Code		RTF016N05
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TUMT3
Drain-Source Voltage (Maximum)	VDS	45V
Gate-Source Voltage (Maximum)	VGS	12V
Drain Current (Maximum)	ID	1.6A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.14Ohm
Power Dissipation (Maximum)	PD	0.8W
Drain-Source Capacitance		40pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		14nS

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