RT3J11M MOSFET Transistor

The RT3J11M is a P-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the RT3J11M transistor as follows.

RT3J11M Transistor Specification

Transistor Code		RT3J11M
Transistor Type		MOSFET
Control Channel Type		P-Channel
Package		SC-88
Transistor SMD Code		J11
Drain-Source Voltage (Maximum)	VDS	50V
Gate-Source Voltage (Maximum)	VGS	8V
Drain Current (Maximum)	ID	0.1A
Drain-Source On-State Resistance (Maximum)	RDS(on)	7Ohm
Power Dissipation (Maximum)	PD	0.15W
Drain-Source Capacitance		5.2pF
Operating Junction Temperature (Maximum)		125°C
Gate-Threshold Voltage (Maximum)		1.2V

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