RT1A045AP MOSFET Transistor

The RT1A045AP is a P-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the RT1A045AP transistor as follows.

RT1A045AP Transistor Specification

Transistor Code		RT1A045AP
Transistor Type		MOSFET
Control Channel Type		P-Channel
Package		TSST8
Drain-Source Voltage (Maximum)	VDS	12V
Gate-Source Voltage (Maximum)	VGS	8V
Drain Current (Maximum)	ID	4.5A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.022Ohm
Power Dissipation (Maximum)	PD	1.25W
Drain-Source Capacitance		350pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		60nS
Total Gate Charge		40nC

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