RQJ0306FQDQA MOSFET Transistor

The RQJ0306FQDQA is a P-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the RQJ0306FQDQA transistor as follows.

RQJ0306FQDQA Transistor Specification

Transistor Code		RQJ0306FQDQA
Transistor Type		MOSFET
Control Channel Type		P-Channel
Package		MPAK
Drain-Source Voltage (Maximum)	VDS	30V
Drain Current (Maximum)	ID	3A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.075Ohm
Power Dissipation (Maximum)	PD	0.8W

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