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RJL5013DPE MOSFET Transistor

The RJL5013DPE is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the RJL5013DPE transistor as follows.

Circuit diagram symbol of the RJL5013DPE transistor

RJL5013DPE Transistor Specification

Transistor Code RJL5013DPE
Transistor Type MOSFET
Control Channel Type N-Channel
Package LDPAK
Drain-Source Voltage (Maximum) VDS 500V
Gate-Source Voltage (Maximum) VGS 30V
Drain Current (Maximum) ID 14A
Drain-Source On-State Resistance (Maximum) RDS(on) 0.51Ohm
Power Dissipation (Maximum) PD 100W
Drain-Source Capacitance 150pF
Operating Junction Temperature (Maximum) 150°C
Rise Time 24nS
Total Gate Charge 37.6nC

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