RJL5013DPE MOSFET Transistor

The RJL5013DPE is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the RJL5013DPE transistor as follows.

RJL5013DPE Transistor Specification

Transistor Code		RJL5013DPE
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		LDPAK
Drain-Source Voltage (Maximum)	VDS	500V
Gate-Source Voltage (Maximum)	VGS	30V
Drain Current (Maximum)	ID	14A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.51Ohm
Power Dissipation (Maximum)	PD	100W
Drain-Source Capacitance		150pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		24nS
Total Gate Charge		37.6nC

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