RJK6012DPE MOSFET Transistor

The RJK6012DPE is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the RJK6012DPE transistor as follows.

RJK6012DPE Transistor Specification

Transistor Code		RJK6012DPE
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		LDPAK
Drain-Source Voltage (Maximum)	VDS	600V
Gate-Source Voltage (Maximum)	VGS	30V
Drain Current (Maximum)	ID	10A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.92Ohm
Power Dissipation (Maximum)	PD	100W
Drain-Source Capacitance		110pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		22nS
Total Gate Charge		30nC

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