RFL2N05 MOSFET Transistor

The RFL2N05 is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the RFL2N05 transistor as follows.

RFL2N05 Transistor Specification

Transistor Code		RFL2N05
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TO205AF
Drain-Source Voltage (Maximum)	VDS	50V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	2A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.95Ohm
Power Dissipation (Maximum)	PD	8.33W
Drain-Source Capacitance		85pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		14nS

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