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RFH35N10 MOSFET Transistor

The RFH35N10 is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the RFH35N10 transistor as follows.

Circuit diagram symbol of the RFH35N10 transistor

RFH35N10 Transistor Specification

Transistor Code RFH35N10
Transistor Type MOSFET
Control Channel Type N-Channel
Package TO-218AC
Drain-Source Voltage (Maximum) VDS 100V
Gate-Source Voltage (Maximum) VGS 20V
Drain Current (Maximum) ID 35A
Drain-Source On-State Resistance (Maximum) RDS(on) 0.055Ohm
Power Dissipation (Maximum) PD 150W
Drain-Source Capacitance 1500pF
Operating Junction Temperature (Maximum) 150°C
Rise Time 225nS
Gate-Threshold Voltage (Maximum) 4V

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