RF1S4N100SM MOSFET Transistor

The RF1S4N100SM is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the RF1S4N100SM transistor as follows.

RF1S4N100SM Transistor Specification

Transistor Code		RF1S4N100SM
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TO263AB
Drain-Source Voltage (Maximum)	VDS	1000V
Drain Current (Maximum)	ID	4.3A
Drain-Source On-State Resistance (Maximum)	RDS(on)	3.5Ohm
Power Dissipation (Maximum)	PD	150W
Operating Junction Temperature (Maximum)		150°C

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