RF1S30N06LESM MOSFET Transistor

The RF1S30N06LESM is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the RF1S30N06LESM transistor as follows.

RF1S30N06LESM Transistor Specification

Transistor Code		RF1S30N06LESM
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TO263AB
Drain-Source Voltage (Maximum)	VDS	60V
Drain Current (Maximum)	ID	30A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.047Ohm
Power Dissipation (Maximum)	PD	96W
Operating Junction Temperature (Maximum)		150°C
Total Gate Charge		51nC

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