R6025ANZ MOSFET Transistor

The R6025ANZ is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the R6025ANZ transistor as follows.

R6025ANZ Transistor Specification

Transistor Code		R6025ANZ
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TO3PF
Drain-Source Voltage (Maximum)	VDS	600V
Gate-Source Voltage (Maximum)	VGS	30V
Drain Current (Maximum)	ID	25A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.12Ohm
Power Dissipation (Maximum)	PD	150W
Drain-Source Capacitance		2400pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		135nS
Total Gate Charge		88nC

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