QM6004S MOSFET Transistor

The QM6004S is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the QM6004S transistor as follows.

QM6004S Transistor Specification

Transistor Code		QM6004S
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		SOP-8
Drain-Source Voltage (Maximum)	VDS	60V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	8A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.03Ohm
Power Dissipation (Maximum)	PD	3.5W
Drain-Source Capacitance		72.5pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		14.2nS
Gate-Threshold Voltage (Maximum)		2.5V
Total Gate Charge		12.56nC

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