QM3015D MOSFET Transistor

The QM3015D is a P-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the QM3015D transistor as follows.

QM3015D Transistor Specification

Transistor Code		QM3015D
Transistor Type		MOSFET
Control Channel Type		P-Channel
Package		TO-252
Drain-Source Voltage (Maximum)	VDS	30V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	57A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.0105Ohm
Power Dissipation (Maximum)	PD	52.1W
Drain-Source Capacitance		508pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		17.8nS
Gate-Threshold Voltage (Maximum)		2.5V
Total Gate Charge		33nC

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