QM3014S MOSFET Transistor

The QM3014S is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the QM3014S transistor as follows.

QM3014S Transistor Specification

Transistor Code		QM3014S
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		SOP-8
Drain-Source Voltage (Maximum)	VDS	30V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	9A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.012Ohm
Power Dissipation (Maximum)	PD	1.5W
Drain-Source Capacitance		131pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		8.2nS
Gate-Threshold Voltage (Maximum)		2.5V
Total Gate Charge		9.63nC

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