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QM2604V MOSFET Transistor

The QM2604V is a NP-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the QM2604V transistor as follows.

Circuit diagram symbol of the QM2604V transistor

QM2604V Transistor Specification

Transistor Code QM2604V
Transistor Type MOSFET
Control Channel Type NP-Channel
Package TSOP6
Drain-Source Voltage (Maximum) VDS 20V
Gate-Source Voltage (Maximum) VGS 12V
Drain Current (Maximum) ID 3.8A
Drain-Source On-State Resistance (Maximum) RDS(on) 0.05Ohm
Power Dissipation (Maximum) PD 1.1W
Drain-Source Capacitance 44pF
Operating Junction Temperature (Maximum) 150°C
Rise Time 40nS
Gate-Threshold Voltage (Maximum) 1.2V
Total Gate Charge 4.7nC

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