PSMN6R3-120ES MOSFET Transistor

The PSMN6R3-120ES is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the PSMN6R3-120ES transistor as follows.

PSMN6R3-120ES Transistor Specification

Transistor Code		PSMN6R3-120ES
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		I2PAK
Drain-Source Voltage (Maximum)	VDS	120V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	70A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.0067Ohm
Power Dissipation (Maximum)	PD	405W
Drain-Source Capacitance		534pF
Operating Junction Temperature (Maximum)		175°C
Rise Time		58.2nS
Gate-Threshold Voltage (Maximum)		4V
Total Gate Charge		207.1nC

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