PSMN4R0-60YS MOSFET Transistor

The PSMN4R0-60YS is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the PSMN4R0-60YS transistor as follows.

PSMN4R0-60YS Transistor Specification

Transistor Code		PSMN4R0-60YS
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		LFPAK56
Drain-Source Voltage (Maximum)	VDS	60V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	74A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.004Ohm
Power Dissipation (Maximum)	PD	130W
Drain-Source Capacitance		457pF
Operating Junction Temperature (Maximum)		175°C
Rise Time		24nS
Gate-Threshold Voltage (Maximum)		4V
Total Gate Charge		56nC

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