PSMN040-200W MOSFET Transistor

The PSMN040-200W is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the PSMN040-200W transistor as follows.

PSMN040-200W Transistor Specification

Transistor Code		PSMN040-200W
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TO-247
Drain-Source Voltage (Maximum)	VDS	200V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	50A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.04Ohm
Power Dissipation (Maximum)	PD	300W
Drain-Source Capacitance		732pF
Operating Junction Temperature (Maximum)		175°C
Rise Time		94nS
Gate-Threshold Voltage (Maximum)		4V
Total Gate Charge		183nC

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