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PSMG150-01 MOSFET Transistor

The PSMG150-01 is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the PSMG150-01 transistor as follows.

Circuit diagram symbol of the PSMG150-01 transistor

PSMG150-01 Transistor Specification

Transistor Code PSMG150-01
Transistor Type MOSFET
Control Channel Type N-Channel
Package ECO-PAC2
Drain-Source Voltage (Maximum) VDS 100V
Gate-Source Voltage (Maximum) VGS 20V
Drain Current (Maximum) ID 165A
Drain-Source On-State Resistance (Maximum) RDS(on) 0.008Ohm
Power Dissipation (Maximum) PD 400W
Drain-Source Capacitance 3200pF
Operating Junction Temperature (Maximum) 150°C
Rise Time 90nS
Gate-Threshold Voltage (Maximum) 4V
Total Gate Charge 400nC

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