PMZB370UNE MOSFET Transistor

The PMZB370UNE is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the PMZB370UNE transistor as follows.

PMZB370UNE Transistor Specification

Transistor Code		PMZB370UNE
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		DFN1006B-3
Drain-Source Voltage (Maximum)	VDS	30V
Gate-Source Voltage (Maximum)	VGS	8V
Drain Current (Maximum)	ID	0.9A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.49Ohm
Power Dissipation (Maximum)	PD	0.36W
Drain-Source Capacitance		9pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		9nS
Gate-Threshold Voltage (Maximum)		1.05V
Total Gate Charge		0.77nC

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