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PMXB56EN MOSFET Transistor

The PMXB56EN is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the PMXB56EN transistor as follows.

Circuit diagram symbol of the PMXB56EN transistor

PMXB56EN Transistor Specification

Transistor Code PMXB56EN
Transistor Type MOSFET
Control Channel Type N-Channel
Package DFN1010D-3
Drain-Source Voltage (Maximum) VDS 30V
Gate-Source Voltage (Maximum) VGS 20V
Drain Current (Maximum) ID 3.2A
Drain-Source On-State Resistance (Maximum) RDS(on) 0.055Ohm
Power Dissipation (Maximum) PD 0.4W
Drain-Source Capacitance 50pF
Operating Junction Temperature (Maximum) 150°C
Rise Time 12nS
Gate-Threshold Voltage (Maximum) 2V
Total Gate Charge 3.6nC

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