PMPB29XNE MOSFET Transistor

The PMPB29XNE is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the PMPB29XNE transistor as follows.

PMPB29XNE Transistor Specification

Transistor Code		PMPB29XNE
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		DFN2020MD-6
Transistor SMD Code		1N
Drain-Source Voltage (Maximum)	VDS	30V
Gate-Source Voltage (Maximum)	VGS	12V
Drain Current (Maximum)	ID	5A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.033Ohm
Power Dissipation (Maximum)	PD	1.7W
Drain-Source Capacitance		110pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		17nS
Gate-Threshold Voltage (Maximum)		0.9V
Total Gate Charge		12.4nC

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