PM560BZ MOSFET Transistor

The PM560BZ is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the PM560BZ transistor as follows.

PM560BZ Transistor Specification

Transistor Code		PM560BZ
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		SOT23
Drain-Source Voltage (Maximum)	VDS	60V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	3A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.088Ohm
Power Dissipation (Maximum)	PD	0.8W
Drain-Source Capacitance		49pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		20nS

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