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PJU2NA60H MOSFET Transistor

The PJU2NA60H is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the PJU2NA60H transistor as follows.

Circuit diagram symbol of the PJU2NA60H transistor

PJU2NA60H Transistor Specification

Transistor Code PJU2NA60H
Transistor Type MOSFET
Control Channel Type N-Channel
Package TO-251AB
Transistor SMD Code U2NA60H
Drain-Source Voltage (Maximum) VDS 600V
Gate-Source Voltage (Maximum) VGS 30V
Drain Current (Maximum) ID 1.4A
Drain-Source On-State Resistance (Maximum) RDS(on) 8.5Ohm
Power Dissipation (Maximum) PD 31W
Drain-Source Capacitance 28pF
Operating Junction Temperature (Maximum) 150°C
Rise Time 20nS
Gate-Threshold Voltage (Maximum) 4V

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