PJP7NA60 MOSFET Transistor

The PJP7NA60 is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the PJP7NA60 transistor as follows.

PJP7NA60 Transistor Specification

Transistor Code		PJP7NA60
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TO-220AB
Transistor SMD Code		P7NA60
Drain-Source Voltage (Maximum)	VDS	600V
Gate-Source Voltage (Maximum)	VGS	30V
Drain Current (Maximum)	ID	7A
Drain-Source On-State Resistance (Maximum)	RDS(on)	1.2Ohm
Power Dissipation (Maximum)	PD	145W
Drain-Source Capacitance		105pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		58nS
Gate-Threshold Voltage (Maximum)		4V

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