PJP12NA60 MOSFET Transistor

The PJP12NA60 is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the PJP12NA60 transistor as follows.

PJP12NA60 Transistor Specification

Transistor Code		PJP12NA60
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TO-220AB
Transistor SMD Code		P12NA60
Drain-Source Voltage (Maximum)	VDS	600V
Gate-Source Voltage (Maximum)	VGS	30V
Drain Current (Maximum)	ID	12A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.7Ohm
Power Dissipation (Maximum)	PD	225W
Drain-Source Capacitance		167pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		72nS
Gate-Threshold Voltage (Maximum)		4V

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