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PHX3N60E MOSFET Transistor

The PHX3N60E is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the PHX3N60E transistor as follows.

Circuit diagram symbol of the PHX3N60E transistor

PHX3N60E Transistor Specification

Transistor Code PHX3N60E
Transistor Type MOSFET
Control Channel Type N-Channel
Package SOT186A
Drain-Source Voltage (Maximum) VDS 600V
Drain Current (Maximum) ID 1.7A
Drain-Source On-State Resistance (Maximum) RDS(on) 4.4Ohm
Power Dissipation (Maximum) PD 30W
Operating Junction Temperature (Maximum) 150°C

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