PHK18NQ03LT MOSFET Transistor

The PHK18NQ03LT is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the PHK18NQ03LT transistor as follows.

PHK18NQ03LT Transistor Specification

Transistor Code		PHK18NQ03LT
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		SO8
Drain-Source Voltage (Maximum)	VDS	30V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	20.3A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.0089Ohm
Power Dissipation (Maximum)	PD	6.25W
Operating Junction Temperature (Maximum)		150°C
Gate-Threshold Voltage (Maximum)		2.15V

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