PHD45N03LTA MOSFET Transistor

The PHD45N03LTA is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the PHD45N03LTA transistor as follows.

PHD45N03LTA Transistor Specification

Transistor Code		PHD45N03LTA
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		DPAK
Drain-Source Voltage (Maximum)	VDS	25V
Gate-Source Voltage (Maximum)	VGS	15V
Drain Current (Maximum)	ID	40A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.021Ohm
Power Dissipation (Maximum)	PD	65W
Drain-Source Capacitance		290pF
Operating Junction Temperature (Maximum)		175°C
Rise Time		60nS
Gate-Threshold Voltage (Maximum)		2V

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