PHD16N03T MOSFET Transistor

The PHD16N03T is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the PHD16N03T transistor as follows.

PHD16N03T Transistor Specification

Transistor Code		PHD16N03T
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		DPAK
Drain-Source Voltage (Maximum)	VDS	30V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	13.1A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.1Ohm
Power Dissipation (Maximum)	PD	32.6W
Drain-Source Capacitance		85pF
Operating Junction Temperature (Maximum)		175°C
Rise Time		45nS
Gate-Threshold Voltage (Maximum)		4V

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