PHB45NQ10T MOSFET Transistor

The PHB45NQ10T is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the PHB45NQ10T transistor as follows.

PHB45NQ10T Transistor Specification

Transistor Code		PHB45NQ10T
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		D2PAK
Drain-Source Voltage (Maximum)	VDS	100V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	47A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.025Ohm
Power Dissipation (Maximum)	PD	150W
Operating Junction Temperature (Maximum)		175°C
Gate-Threshold Voltage (Maximum)		4V
Total Gate Charge		61nC

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