PA110BD MOSFET Transistor

The PA110BD is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the PA110BD transistor as follows.

PA110BD Transistor Specification

Transistor Code		PA110BD
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TO252
Drain-Source Voltage (Maximum)	VDS	100V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	15A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.11Ohm
Power Dissipation (Maximum)	PD	50W
Drain-Source Capacitance		103pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		170nS

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