P5806NVG MOSFET Transistor

The P5806NVG is a NP-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the P5806NVG transistor as follows.

P5806NVG Transistor Specification

Transistor Code		P5806NVG
Transistor Type		MOSFET
Control Channel Type		NP-Channel
Package		SOP8
Drain-Source Voltage (Maximum)	VDS	60V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	3.5A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.065Ohm
Power Dissipation (Maximum)	PD	2W
Operating Junction Temperature (Maximum)		150°C
Gate-Threshold Voltage (Maximum)		2.5V

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