P50B6EA MOSFET Transistor

The P50B6EA is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the P50B6EA transistor as follows.

P50B6EA Transistor Specification

Transistor Code		P50B6EA
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TO-252
Drain-Source Voltage (Maximum)	VDS	60V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	50A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.0085Ohm
Power Dissipation (Maximum)	PD	62.5W
Drain-Source Capacitance		355pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		225nS
Gate-Threshold Voltage (Maximum)		2.5V
Total Gate Charge		50nC

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