OM11N60SA MOSFET Transistor

The OM11N60SA is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the OM11N60SA transistor as follows.

OM11N60SA Transistor Specification

Transistor Code		OM11N60SA
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TO254AA
Drain-Source Voltage (Maximum)	VDS	600V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	11A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.44Ohm
Power Dissipation (Maximum)	PD	125W
Drain-Source Capacitance		3000pF
Operating Junction Temperature (Maximum)		150°C

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