NVTJD4001N MOSFET Transistor

The NVTJD4001N is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the NVTJD4001N transistor as follows.

NVTJD4001N Transistor Specification

Transistor Code		NVTJD4001N
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		SOT-363
Transistor SMD Code		TE
Drain-Source Voltage (Maximum)	VDS	30V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	0.25A
Drain-Source On-State Resistance (Maximum)	RDS(on)	1.5Ohm
Power Dissipation (Maximum)	PD	0.272W
Drain-Source Capacitance		19pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		23nS
Gate-Threshold Voltage (Maximum)		1.5V
Total Gate Charge		0.9nC

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